driver & gain block amplifiers - smt 5 5 - 100 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com HMC478SC70 / 478sc70e sige hbt gain block mmic amplifier, dc - 4 ghz v00.0607 general description functional diagram typical applications electrical specifications, vs= 5v, rbias= 18 ohm, t a = +25 c features the HMC478SC70(e) is a sige heterojunction bipolar transistor (hbt) gain block mmic smt ampli er covering dc to 4 ghz. this industry stan- dard sc70 packaged ampli er can be used as a cas- cadable 50 ohm rf/if gain stage as well as a lo or pa driver with up to +17 dbm output power. the HMC478SC70(e) offers 23 db of gain with a +31 dbm output ip3 at 850 mhz while requiring only 62 ma from a single positive supply. the darlington topol- ogy results in reduced sensitivity to normal process variations and excellent gain stability over tempera- ture while requiring a minimal number of external bias components. p1db output power: +17 dbm gain: 23 db output ip3: +31 dbm cascadable 50 ohm i/os single supply: +5v to +8v industry standard sc70 package the HMC478SC70(e) is an ideal for: ? cellular / pcs / 3g ? wibro / wimax / 4g ? fixed wireless & wlan ? catv, cable modem & dbs ? microwave radio & test equipment parameter min. typ. max. units gain dc - 1.0 ghz 1.0 - 2.0 ghz 2.0 - 3.0 ghz 3.0 - 4.0 ghz 20 16 13 11 24 20 17 15 db db db db gain variation over temperature dc - 4.0 ghz 0.015 0.02 db/ c input return loss dc - 3.0 ghz 3.0 - 4.0 ghz 15 17 db db output return loss dc - 3.0 ghz 3.0 - 4.0 ghz 15 13 db db reverse isolation dc - 4.0 ghz 20 db output power for 1 db compression (p1db) 0.5 - 2.0 ghz 2.0 - 3.0 ghz 3.0 - 4.0 ghz 13 11 9 16 15 12 dbm dbm dbm output third order intercept (ip3) (pout= 0 dbm per tone, 1 mhz spacing) 0.5 - 2.0 ghz 2.0 - 3.0 ghz 3.0 - 4.0 ghz 31 28 25 dbm dbm dbm noise figure dc - 3.0 ghz 3.0 - 4.0 ghz 2.5 2.8 db db supply current (icq) 62 82 ma
driver & gain block amplifiers - smt 5 5 - 101 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com output return loss vs. temperature broadband gain & return loss gain vs. temperature reverse isolation vs. temperature input return loss vs. temperature noise figure vs. temperature HMC478SC70 / 478sc70e sige hbt gain block mmic amplifier, dc - 4 ghz v00.0607 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 012345678 s21 s11 s22 response (db) frequency (ghz) 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 012345 +25c +85c -40c gain (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 012345 +25c +85c -40c return loss (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 012345 s21 s11 s22 return loss (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 012345 +25c +85c -40c reverse isolation (db) frequency (ghz) 0 1 2 3 4 5 6 7 8 9 10 012345 +25c +85c -40c noise figure (db) frequency (ghz)
driver & gain block amplifiers - smt 5 5 - 102 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com p1db vs. temperature psat vs. temperature output ip3 vs. temperature icc vs. vcc over temperature for fixed vs= 5v, r bias = 18 ohms gain, power & oip3 vs. supply voltage for rs = 18 ohms @ 850 mhz HMC478SC70 / 478sc70e sige hbt gain block mmic amplifier, dc - 4 ghz v00.0607 0 2 4 6 8 10 12 14 16 18 20 22 24 012345 +25c +85c -40c p1db (dbm) frequency (ghz) 0 2 4 6 8 10 12 14 16 18 20 22 24 012345 +25c +85c -40c psat (dbm) frequency (ghz) 10 15 20 25 30 35 012345 +25c +85c -40c ip3 (dbm) frequency (ghz) 8 10 12 14 16 18 20 22 24 26 28 30 32 34 4.75 5 5.25 gain p1db psat oip3 gain (db), p1db (dbm), psat (dbm), oip3 (dbm) vs (vdc) 40 45 50 55 60 65 70 75 80 3.60 3.70 3.80 3.90 4.00 4.10 4.20 icc (ma) vcc (v) +85c +25c -40c
driver & gain block amplifiers - smt 5 5 - 103 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com outline drawing absolute maximum ratings collector bias voltage (vcc) +6.0 vdc collector bias current (icc) 100 ma rf input power (rfin)(vcc = +2.4 vdc) +5 dbm junction temperature 150 c continuous pdiss (t = 85 c) (derate 9 mw/c above 85 c) 0.583 w thermal resistance (junction to lead) 111. 5 c/ w storage temperature -65 to +150 c operating temperature -40 to +85 c esd sensitivity (hbm) class 1c part number package body material lead finish msl rating package marking HMC478SC70 low stress injection molded plastic sn/pb solder msl1 [1] 478 HMC478SC70e rohs-compliant low stress injection molded plastic 100% matte sn msl1 [2] 478 [1] max peak re ow temperature of 235 c [2] max peak re ow temperature of 260 c package information electrostatic sensitive device observe handling precautions HMC478SC70 / 478sc70e sige hbt gain block mmic amplifier, dc - 4 ghz v00.0607 notes: 1. package body material: low stress injection molded plastic silica and silicon impregnated. 2. lead material: copper alloy 3. lead plating: sn/pb solder 4. dimensions are in inches [millimeters]. 5. dimension does not include moldflash of 0.15mm per side. 6. dimension does not include moldflash of 0.25mm per side. 7. all ground leads must be soldered to pcb rf ground.
driver & gain block amplifiers - smt 5 5 - 104 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com pin number function description interface schematic 1, 2, 4, 5 gnd these pins must be connected to rf/dc ground. 3rfin this pin is dc coupled. an off chip dc blocking capacitor is required. 6 rfout rf output and dc bias (vcc) for the output stage. application circuit pin descriptions HMC478SC70 / 478sc70e sige hbt gain block mmic amplifier, dc - 4 ghz v00.0607 recommended component values for key application frequencies component frequency (mhz) 50 900 1900 2200 2400 3500 l1 270 nh 56 nh 18 nh 18 nh 15 nh 8.2 nh c1, c2 0.01 f 100 pf 100 pf 100 pf 100 pf 100 pf note: 1. external blocking capacitors are required on rfin and rfout. 2. r bias provides dc bias stability over temperature. recommended bias resistor values for icc= 62 ma, rbias= (vs - vcc) / icc supply voltage (vs) 5v 6v 8v r bias v alue 18 35 67 r bias p ower r ating 1/8 w 1/4 w 1/2 w
driver & gain block amplifiers - smt 5 5 - 105 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com evaluation pcb the circuit board used in the nal application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown. a suf cient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appropriate heat sink. the evaluation circuit board shown is available from hittite upon request. list of materials for evaluation pcb 118039 [1] item description j1 - j2 pcb mount sma connector j3 - j4 dc pin c1 - c3 100 pf capacitor, 0402 pkg. c4 1000 pf capacitor, 0603 pkg. c5 2.2 f capacitor, tantalum r1 18 ohm resistor, 1210 pkg. l1 18 nh inductor, 0603 pkg. u1 HMC478SC70(e) pcb [2] 1173 6 0 evaluation pcb [1] reference this number when ordering complete evaluation pcb [2] circuit board material: rogers 4350 HMC478SC70 / 478sc70e sige hbt gain block mmic amplifier, dc - 4 ghz v00.0607
|
